| PART |
Description |
Maker |
| WG1204301 WG20042R23 WG12032R23 WESTCODESEMICONDUC |
4300 V, GATE TURN-OFF SCR
4200 V, GATE TURN-OFF SCR
3200 V, GATE TURN-OFF SCR
1400 V, GATE TURN-OFF SCR
3400 V, GATE TURN-OFF SCR
4100 V, GATE TURN-OFF SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| CD4019BC CD4019BCM CD4019BCN CD4019BCSJ CD4019BCMX |
Quad AND-OR Select Gate
Quad 2-input OR Gate 4000/14000/40000 SERIES, QUAD 2-INPUT AND-OR GATE, PDSO16
Single 2-Input NAND Gate with Schmitt-Trigger Input 5-SC70 -40 to 85 4000/14000/40000 SERIES, QUAD 2-INPUT AND-OR GATE, PDIP16
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| DM54H20J DM54H20J_883 DM54H20J_883B DM54H20J_883C |
Single 8-input NAND Gate 8输入与非
Dual 4-input NAND Gate 4输入与非
CERAMIC CHIP/MIL-PRF-55681 陶瓷芯片/mil-prf-55681
Quad 2-input NAND Gate 输入与非
Dual 4-input NAND Gate 输入与非
Triple 3-input NAND Gate
Dual4-inputNANDGate
|
Cypress Semiconductor, Corp.
Rochester Electronics, LLC
TE Connectivity, Ltd.
|
| KK4011B |
Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
| MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| AP2344GEN-HF AP2344GEN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| AP2308GEN-HF AP2308GEN-HF-14 |
Capable of 2.5V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| KK4023B |
Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
| IN74HC20A IN74HC20AD IN74HC20AN |
Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS
|
IK Semicon Co., Ltd
|
| AP2344GN-HF AP2344GN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
